Invention Grant
- Patent Title: Common modules for DDRII SDRAM and DDRIII SDRAM
- Patent Title (中): DDRII SDRAM和DDRIII SDRAM的通用模块
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Application No.: US11819114Application Date: 2007-06-25
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Publication No.: US07825681B2Publication Date: 2010-11-02
- Inventor: Chin-Hui Chen , Hou-Yuan Lin
- Applicant: Chin-Hui Chen , Hou-Yuan Lin
- Applicant Address: TW Taipei
- Assignee: Giga-Byte Technology Co.
- Current Assignee: Giga-Byte Technology Co.
- Current Assignee Address: TW Taipei
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/003

Abstract:
A common module for a double data rate-synchronous II synchronous dynamic random access memory (DDRII SDRAM) and a DDRIII SDRAM applied in a computer is provided. The common module includes a first bus, a termination circuit card, a first slot, and a second slot. The first bus transmits a plurality of signals. The termination circuit card comprises a plurality of termination resistors. The first slot is disposed on the common module and coupled to the first bus. The DDRII SDRAM is installed in the first slot. The second slot is disposed on the common module and coupled to the first bus. The DDRIII SDRAM or the termination circuit card is installed in the second slot. When the DDRII SDRAM is installed in the first slot, the termination circuit card is installed in the second slot.
Public/Granted literature
- US20080316220A1 Common modules for DDRII SDRAM and DDRIII SDRAM Public/Granted day:2008-12-25
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