Invention Grant
US07825683B2 On die termination device and semiconductor memory device including the same
有权
在晶片终端器件和包括其的半导体存储器件中
- Patent Title: On die termination device and semiconductor memory device including the same
- Patent Title (中): 在晶片终端器件和包括其的半导体存储器件中
-
Application No.: US12181628Application Date: 2008-07-29
-
Publication No.: US07825683B2Publication Date: 2010-11-02
- Inventor: Ki-Ho Kim , Ji-Eun Jang
- Applicant: Ki-Ho Kim , Ji-Eun Jang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0111349 20071102
- Main IPC: H03K17/16
- IPC: H03K17/16
Abstract:
On die termination (ODT) device that can reduce the number of lines for transferring calibration codes to reduce the size of a chip including the ODT device. The ODT device includes a calibration circuit configured to generate calibration codes for determining a termination resistance, a counting circuit configured to generate counting codes increasing with time. A transferring circuit of the device is configured sequentially to transfer the calibration codes in response to the counting codes. A receiving circuit is configured sequentially to receive the calibration codes from the transferring circuit in response to the counting codes. A termination resistance circuit of the device is configured to perform impedance matching using a resistance determined according to the calibration codes.
Public/Granted literature
- US20090115449A1 ON DIE TERMINATION DEVICE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2009-05-07
Information query
