Invention Grant
US07825690B2 Decouple capacitor forming circuit, integrated circuit utilizing the decouple capacitor forming circuit and related method
有权
去耦合电容器形成电路，利用去耦电容器形成电路的集成电路及相关方法
- Patent Title: Decouple capacitor forming circuit, integrated circuit utilizing the decouple capacitor forming circuit and related method
- Patent Title (中): 去耦合电容器形成电路，利用去耦电容器形成电路的集成电路及相关方法
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Application No.: US12409488Application Date: 2009-03-24
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Publication No.: US07825690B2Publication Date: 2010-11-02
- Inventor: Yi-Lin Chen , Chih-Hao Chen
- Applicant: Yi-Lin Chen , Chih-Hao Chen
- Applicant Address: TW Hsinchu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas, Kayden, Horstemeyer & Risley, LLP
- Priority: TW97110573A 20080325
- Main IPC: H03K19/094
- IPC: H03K19/094
Abstract:
A method for forming a decouple capacitor of an integrated circuit, the integrated circuit including a core circuit and a plurality of I/O circuits coupled to the core circuit, includes cutting part of a plurality of lines in at least one specific circuit of the I/O circuits to form decouple capacitors of the integrated circuit.
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