Invention Grant
- Patent Title: Semiconductor memory device and output drive circuit thereof
- Patent Title (中): 半导体存储器件及其输出驱动电路
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Application No.: US12045471Application Date: 2008-03-10
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Publication No.: US07825692B2Publication Date: 2010-11-02
- Inventor: Young-Sik Kim
- Applicant: Young-Sik Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2007-0023114 20070308
- Main IPC: H03K19/094
- IPC: H03K19/094
Abstract:
An apparatus for supplying current to a semiconductor memory device. A current supply circuit supplies current to an input/output (I/O) drive circuit responsive to a pattern of data input to the I/O drive circuit. The current supply circuit configured to supply current generated by an external voltage to the I/O drive circuit responsive to a first pattern of data input to the I/O drive circuit, and to prevent the current generated by the external voltage from being supplied to the I/O drive circuit responsive to a second pattern of data input to the I/O drive circuit.
Public/Granted literature
- US20080219079A1 SEMICONDUCTOR MEMORY DEVICE AND OUTPUT DRIVE CIRCUIT THEREOF Public/Granted day:2008-09-11
Information query
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