Invention Grant
US07825693B1 Reduced duty cycle distortion using controlled body device 失效
使用受控体设备减少占空比失真

Reduced duty cycle distortion using controlled body device
Abstract:
A semiconductor chip comprising a reference circuit and a target circuit. The reference circuit comprises a first P-channel field effect transistor (PFET) and a first N-channel field effect transistor (NFET). A reference voltage is connected to gates of the first PFET and first NFET. A body control voltage node is formed by connecting a drain of the first PFET, a body of the first PFET, a drain of the first NFET and a body of the first NFET. A target circuit comprises a second PFET and a second NFET. The body control voltage node is connected to a body of the second PFET and the second NFET. The body control voltage improves duty cycle in the target circuit compared to a similarly designed circuit having PFET bodies connected to Vdd and NFET bodies connected to Ground.
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