Invention Grant
- Patent Title: Reduced duty cycle distortion using controlled body device
- Patent Title (中): 使用受控体设备减少占空比失真
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Application No.: US12550877Application Date: 2009-08-31
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Publication No.: US07825693B1Publication Date: 2010-11-02
- Inventor: Oded Katz , Israel A. Wagner
- Applicant: Oded Katz , Israel A. Wagner
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
A semiconductor chip comprising a reference circuit and a target circuit. The reference circuit comprises a first P-channel field effect transistor (PFET) and a first N-channel field effect transistor (NFET). A reference voltage is connected to gates of the first PFET and first NFET. A body control voltage node is formed by connecting a drain of the first PFET, a body of the first PFET, a drain of the first NFET and a body of the first NFET. A target circuit comprises a second PFET and a second NFET. The body control voltage node is connected to a body of the second PFET and the second NFET. The body control voltage improves duty cycle in the target circuit compared to a similarly designed circuit having PFET bodies connected to Vdd and NFET bodies connected to Ground.
Information query
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