Invention Grant
- Patent Title: Method and apparatus for systematic and random variation and mismatch compensation for multilevel flash memory operation
- Patent Title (中): 用于多级闪存操作的系统和随机变化和失配补偿的方法和装置
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Application No.: US12131008Application Date: 2008-05-30
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Publication No.: US07825698B2Publication Date: 2010-11-02
- Inventor: Hieu Van Tran , Hung Quoc Nguyen
- Applicant: Hieu Van Tran , Hung Quoc Nguyen
- Applicant Address: US CA Sunnyvale
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: DLA Piper LLP (US)
- Main IPC: G01R19/00
- IPC: G01R19/00
Abstract:
Method and means for random or systematic mismatch compensation for a memory sensing system are disclosed. A sense amplifier includes a bulk voltage source to set the bulk of the sensing transistor to be a voltage different than the voltage driving the sensing transistor. For an NMOS sensing transistor, a triple well is used with the variable bulk voltage. Differential sense amplifiers with various offset compensation are included. Intentional offset creation for useful purpose is also included.
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