Invention Grant
- Patent Title: RF amplifying device
- Patent Title (中): 射频放大装置
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Application No.: US12192240Application Date: 2008-08-15
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Publication No.: US07825731B2Publication Date: 2010-11-02
- Inventor: Masami Ohnishi , Ryouichi Tanaka
- Applicant: Masami Ohnishi , Ryouichi Tanaka
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2007-253391 20070928
- Main IPC: H03F3/213
- IPC: H03F3/213

Abstract:
An RF amplifying device includes a transmission line transformer coupled to an output electrode of a power transistor for generating transmission power to be fed to an antenna. The transmission power from the output electrode of the power transistor is fed to one end of a main line of the transmission line transformer, and one end of a secondary line of the transmission line transformer is coupled to an AC grounding node. The other end of the secondary line is coupled to the one end of the main line, thereby generating the transmission power. Coupling energy is transmitted from the secondary line to the main line. Coupling members electrically coupled to the output electrode of the power transistor are electrically coupled to a joint formed in either the main line, or the secondary line, at part of the energy coupling part.
Public/Granted literature
- US20090085666A1 RF AMPLIFYING DEVICE Public/Granted day:2009-04-02
Information query
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