Invention Grant
- Patent Title: Electron multiplication gain calibration mechanism and electron multiplication gain calibrating method
- Patent Title (中): 电子倍增增益校准机制及电子倍增增益校准方法
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Application No.: US11727698Application Date: 2007-03-28
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Publication No.: US07825960B2Publication Date: 2010-11-02
- Inventor: Ikuo Akiyama
- Applicant: Ikuo Akiyama
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2006-093834 20060330
- Main IPC: H04N5/235
- IPC: H04N5/235

Abstract:
An electron multiplication gain calibration mechanism, which is capable of readily stabilizing a gain of an electron multiplying CCD image pickup device, is provided. The mechanism comprises a gain adjusting section and a control section. The gain adjusting section is provided independently of gain adjustment by the electron multiplying CCD image pickup device, and sets a reference gain. The control section calibrates the gate voltage for obtaining a desired electron multiplication gain by comparing a video level amplified by the electron multiplication gain to a video level amplified by the reference gain. The control section sets an initial value of the gate voltage, which is supposed to provide the electron multiplication gain equal to the reference gain, and controls the gate voltage gradually so that the video level amplified by the electron multiplication gain becomes equal to the video level amplified by reference gain.
Public/Granted literature
- US20070228255A1 Electron multiplication gain calibration mechanism and electron multiplication gain calibrating method Public/Granted day:2007-10-04
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