Invention Grant
US07826033B2 Method to recover the exposure sensitivity of chemically amplified resins from post coat delay effect
失效
从后期涂层延迟效应中回收化学扩增树脂的曝光灵敏度的方法
- Patent Title: Method to recover the exposure sensitivity of chemically amplified resins from post coat delay effect
- Patent Title (中): 从后期涂层延迟效应中回收化学扩增树脂的曝光灵敏度的方法
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Application No.: US11092370Application Date: 2005-03-29
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Publication No.: US07826033B2Publication Date: 2010-11-02
- Inventor: Baorui Yang
- Applicant: Baorui Yang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Whyte Hirschboeck Dudek SC
- Main IPC: G03B27/42
- IPC: G03B27/42 ; G03F9/00
Abstract:
Methods of fabricating a photomask, methods of treating a chemically amplified resist-coated photomask blank, a photomask blank resulting from the methods, and systems for fabricating a photomask are provided. The method is useful for recovering the exposure sensitivity of a chemically amplified resist disposed on a photomask blank from a post-coat delay effect.
Public/Granted literature
- US20050170266A1 Method to recover the exposure sensitivity of chemically amplified resins from post coat delay effect Public/Granted day:2005-08-04
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