Invention Grant
US07826181B2 Magnetic memory with porous non-conductive current confinement layer
有权
具有多孔非导电电流限制层的磁记忆体
- Patent Title: Magnetic memory with porous non-conductive current confinement layer
- Patent Title (中): 具有多孔非导电电流限制层的磁记忆体
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Application No.: US12269537Application Date: 2008-11-12
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Publication No.: US07826181B2Publication Date: 2010-11-02
- Inventor: Michael Xuefei Tang , Ming Sun , Dimitar V. Dimitrov , Patrick Ryan
- Applicant: Michael Xuefei Tang , Ming Sun , Dimitar V. Dimitrov , Patrick Ryan
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Campbell Nelson Whipps LLC
- Main IPC: G11B5/33
- IPC: G11B5/33 ; G11B5/127
Abstract:
A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
Public/Granted literature
- US20100117170A1 MAGNETIC MEMORY WITH POROUS NON-CONDUCTIVE CURRENT CONFINEMENT LAYER Public/Granted day:2010-05-13
Information query
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