Invention Grant
US07826182B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with CoFeGe ferromagnetic layers
有权
具有CoFeGe铁磁层的电流垂直平面(CPP)磁阻传感器
- Patent Title: Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with CoFeGe ferromagnetic layers
- Patent Title (中): 具有CoFeGe铁磁层的电流垂直平面(CPP)磁阻传感器
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Application No.: US11781576Application Date: 2007-07-23
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Publication No.: US07826182B2Publication Date: 2010-11-02
- Inventor: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- Applicant: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agent Thomas R. Berthold
- Main IPC: G11B5/127
- IPC: G11B5/127

Abstract:
A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a ferromagnetic alloy comprising Co, Fe and Ge in the sensor's free layer and/or pinned layer. The sensor may be a simple pinned structure, in which case the pinned layer may be formed of the CoFeGe ferromagnetic alloy. Alternatively, the sensor may have an AP-pinned layer structure, in which case the AP2 layer may be formed of the CoFeGe ferromagnetic alloy. The Ge-containing alloy comprises Co, Fe and Ge, wherein Ge is present in the alloy in an amount between about 20 and 40 atomic percent, and wherein the ratio of Co to Fe in the alloy is between about 0.8 and 1.2. More particularly, the CoFeGe alloy may consist essentially of only Co, Fe and Ge according to the formula (CoxFe(100-x))(100-y)Gey where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 23 and 37.
Public/Granted literature
- US20090027813A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH CoFeGe FERROMAGNETIC LAYERS Public/Granted day:2009-01-29
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