Invention Grant
- Patent Title: String contact structure for high voltage ESD
- Patent Title (中): 串接触结构用于高电压ESD
-
Application No.: US11585011Application Date: 2006-10-23
-
Publication No.: US07826193B2Publication Date: 2010-11-02
- Inventor: Dah-Jyh Perng , Shui-Hung Chen , Jian-Hsing Lee , Huang Yung-Sheng
- Applicant: Dah-Jyh Perng , Shui-Hung Chen , Jian-Hsing Lee , Huang Yung-Sheng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
The present invention relates to an electrostatic discharge (ESD) protection scheme and particularly to a string contact structure for an improved ESD performance. In an embodiment, the invention provides a method for forming an ESD protection circuit for protecting an internal circuit from damage due to an ESD voltage appearing on a pad coupled to a clamp device including a first terminal and a second terminal. The method includes forming a string contact along the first terminal and the second terminal of the clamp device. The method further includes forming one or more conductive layers on the string contact to couple the first terminal and the second terminal of the clamp device to the pad and a ground pad.
Public/Granted literature
- US20080093672A1 String contact structure for high voltage ESD Public/Granted day:2008-04-24
Information query