Invention Grant
- Patent Title: Low cost high density rectifier matrix memory
- Patent Title (中): 低成本高密度整流矩阵存储器
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Application No.: US11780909Application Date: 2007-07-20
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Publication No.: US07826244B2Publication Date: 2010-11-02
- Inventor: Daniel R. Shepard
- Applicant: Daniel R. Shepard
- Applicant Address: US MA Billerica
- Assignee: Contour Semiconductor, Inc.
- Current Assignee: Contour Semiconductor, Inc.
- Current Assignee Address: US MA Billerica
- Agency: Goodwin Procter LLP
- Main IPC: G11C5/02
- IPC: G11C5/02
Abstract:
A high density memory device is fabricated three dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and data lines, only the address signal lines need be interconnected between the layers.
Public/Granted literature
- US20080016414A1 Low Cost High Density Rectifier Matrix Memory Public/Granted day:2008-01-17
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