Invention Grant
US07826247B2 Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor
有权
用于初始化电阻变化材料的方法，包含电阻变化材料的存储器件，以及用于初始化包含可变电阻器的非易失性存储器电路的方法
- Patent Title: Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor
- Patent Title (中): 用于初始化电阻变化材料的方法，包含电阻变化材料的存储器件，以及用于初始化包含可变电阻器的非易失性存储器电路的方法
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Application No.: US12078385Application Date: 2008-03-31
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Publication No.: US07826247B2Publication Date: 2010-11-02
- Inventor: Shunsaku Muraoka , Koichi Osano , Ken Takahashi , Masafumi Shimotashiro
- Applicant: Shunsaku Muraoka , Koichi Osano , Ken Takahashi , Masafumi Shimotashiro
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2003-421374 20031218; JP2003-435501 20031226
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
An initialization method of the present invention is a method for initializing a material (variable-resistance material) (2) whose resistance value increases/decreases according to the polarity of an applied electric pulse. An electric pulse having a first polarity is applied at least once between first and second electrodes (1, 3) connected to the variable-resistance material (2) such that the potential of the first electrode is higher than that of the second electrode.
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