Invention Grant
US07826251B2 High performance metal gate polygate 8 transistor SRAM cell with reduced variability
有权
高性能金属门Polygate 8晶体管SRAM单元具有降低的变异性
- Patent Title: High performance metal gate polygate 8 transistor SRAM cell with reduced variability
- Patent Title (中): 高性能金属门Polygate 8晶体管SRAM单元具有降低的变异性
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Application No.: US12125637Application Date: 2008-05-22
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Publication No.: US07826251B2Publication Date: 2010-11-02
- Inventor: Leland Chang , Jeffrey W. Sleight
- Applicant: Leland Chang , Jeffrey W. Sleight
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Micheal J. Buchenhorner; Vazken Alexanian
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A static random access memory cell includes a metal hi-k layer; a poly-SiON gate stack over the metal hi-k layer; a plurality of inverters disposed within the poly-SiON gate stack; and a plurality of field effect transistors placed in the metal hi-k layer.
Public/Granted literature
- US20090290439A1 HIGH PERFORMANCE METAL GATE POLYGATE 8 TRANSISTOR SRAM CELL WITH REDUCED VARIABILITY Public/Granted day:2009-11-26
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