Invention Grant
- Patent Title: Read-preferred SRAM cell design
- Patent Title (中): 读取优先的SRAM单元设计
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Application No.: US12201725Application Date: 2008-08-29
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Publication No.: US07826252B2Publication Date: 2010-11-02
- Inventor: Ping-Wei Wang , Yuh-Jier Mii , Hung-Jen Liao
- Applicant: Ping-Wei Wang , Yuh-Jier Mii , Hung-Jen Liao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method for operating a static random access memory (SRAM) cell includes providing the SRAM cell having a static read margin and a static write margin, wherein the static read margin is greater than the static write margin; applying a dynamic power to perform a write operation on the SRAM cell; and applying a static power to perform a read operation on the SRAM cell.
Public/Granted literature
- US20080316799A1 Read-Preferred SRAM Cell Design Public/Granted day:2008-12-25
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