Invention Grant
US07826261B2 Semiconductor memory device, method of writing data therein, and method of reading data therefrom
有权
半导体存储器件，其中写入数据的方法，以及从其读取数据的方法
- Patent Title: Semiconductor memory device, method of writing data therein, and method of reading data therefrom
- Patent Title (中): 半导体存储器件，其中写入数据的方法，以及从其读取数据的方法
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Application No.: US12155648Application Date: 2008-06-06
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Publication No.: US07826261B2Publication Date: 2010-11-02
- Inventor: Toshinori Fukai
- Applicant: Toshinori Fukai
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-152014 20070607
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A semiconductor memory device (1) has a FET (10) (first field-effect transistor), a FET (20) (second field-effect transistor), a contact plug (32) (first conductive plug), contact plugs (34) (second conductive plugs), and a detection circuit (50). The FET (20) is provided in a double well (40). M (m is a natural number) contact plugs (32) are connected to a diffusion layer (22) of the FET (20) while n (n is a natural number) contact plugs (34) are connected to a diffusion layer (24). Here, m is smaller than n. The detection circuit (50) detects the difference between the output of the FET (10) and the output of the FET (20).
Public/Granted literature
- US20080304315A1 Semiconductor memory device, method of writing data therein, and method of reading data therefrom Public/Granted day:2008-12-11
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