Invention Grant
- Patent Title: Memory system including flash memory and method of operating the same
- Patent Title (中): 内存系统包括闪存及其操作方法
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Application No.: US11710991Application Date: 2007-02-27
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Publication No.: US07826263B2Publication Date: 2010-11-02
- Inventor: Kyoong-Han Lee , Young-Joon Choi , Yang-Sup Lee
- Applicant: Kyoong-Han Lee , Young-Joon Choi , Yang-Sup Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0085865 20060906
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A method for operating a memory system including a flash memory device having a plurality of memory blocks includes determining whether a read error generated during a read operation of the flash memory device is caused by read disturbance and replacing a memory block which includes the read error, with a spare memory block if the read error is caused by read disturbance.
Public/Granted literature
- US20080055989A1 Memory system including flash memory and method of operating the same Public/Granted day:2008-03-06
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