发明授权
- 专利标题: Nonvolatile semiconductor memory
- 专利标题(中): 非易失性半导体存储器
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申请号: US12236015申请日: 2008-09-23
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公开(公告)号: US07826268B2公开(公告)日: 2010-11-02
- 发明人: Norihiro Fujita , Toshihiko Himeno , Hitoshi Shiga
- 申请人: Norihiro Fujita , Toshihiko Himeno , Hitoshi Shiga
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-246816 20070925
- 主分类号: G11C11/34
- IPC分类号: G11C11/34 ; G11C16/04
摘要:
A nonvolatile semiconductor memory, has a first wire; a second wire adjacent to the first wire; a third wire disposed next to the second wire such that the second wire is disposed between the first wire and the third wire; a power supply circuit for setting each of the wires at a predetermined potential; and a determining circuit for determining presence or absence of a short circuit between the wires.
公开/授权文献
- US20090080261A1 NONVOLATILE SEMICONDUCTOR MEMORY 公开/授权日:2009-03-26
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