Invention Grant
- Patent Title: Nonvolatile semiconductor memory
- Patent Title (中): 非易失性半导体存储器
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Application No.: US12236015Application Date: 2008-09-23
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Publication No.: US07826268B2Publication Date: 2010-11-02
- Inventor: Norihiro Fujita , Toshihiko Himeno , Hitoshi Shiga
- Applicant: Norihiro Fujita , Toshihiko Himeno , Hitoshi Shiga
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-246816 20070925
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04

Abstract:
A nonvolatile semiconductor memory, has a first wire; a second wire adjacent to the first wire; a third wire disposed next to the second wire such that the second wire is disposed between the first wire and the third wire; a power supply circuit for setting each of the wires at a predetermined potential; and a determining circuit for determining presence or absence of a short circuit between the wires.
Public/Granted literature
- US20090080261A1 NONVOLATILE SEMICONDUCTOR MEMORY Public/Granted day:2009-03-26
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