Invention Grant
- Patent Title: Nonvolatile memory with index programming and reduced verify
- Patent Title (中): 具有索引编程和减少验证的非易失性存储器
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Application No.: US12138378Application Date: 2008-06-12
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Publication No.: US07826271B2Publication Date: 2010-11-02
- Inventor: Raul-Adrian Cernea
- Applicant: Raul-Adrian Cernea
- Applicant Address: US CA Milpitas
- Assignee: Sandisk Corporation
- Current Assignee: Sandisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
In a non-volatile memory a group of memory cells is programmed respectively to their target states in parallel using a multiple-pass index programming method which reduces the number of verify steps. For each cell a program index is maintained storing the last programming voltage applied to the cell. Each cell is indexed during a first programming pass with the application of a series of incrementing programming pulses. The first programming pass is followed by verification and one or more subsequent programming passes to trim any short-falls to the respective target states. If a cell fails to verify to its target state, its program index is incremented and allows the cell to be programmed by the next pulse from the last received pulse. The verify and programming pass are repeated until all the cells in the group are verified to their respective target states. No verify operations between pulses are necessary.
Public/Granted literature
- US20090310419A1 Nonvolatile Memory with Index Programming and Reduced Verify Public/Granted day:2009-12-17
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