Invention Grant
- Patent Title: Semiconductor memory device for generating core voltage
- Patent Title (中): 用于产生核心电压的半导体存储器件
-
Application No.: US12165118Application Date: 2008-06-30
-
Publication No.: US07826278B2Publication Date: 2010-11-02
- Inventor: Jae-Boum Park , Seok-Cheol Yoon
- Applicant: Jae-Boum Park , Seok-Cheol Yoon
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0087231 20070829
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
Semiconductor memory device includes a detection circuit configured to detect a voltage level of an external power supply voltage and a core voltage generation circuit configured to vary a voltage level of the core voltage according to an output signal of the detection circuit to generate a uniform core voltage.
Public/Granted literature
- US20090059681A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-03-05
Information query
