Invention Grant
- Patent Title: Memory read control circuit
- Patent Title (中): 存储器读控制电路
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Application No.: US12219521Application Date: 2008-07-23
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Publication No.: US07826281B2Publication Date: 2010-11-02
- Inventor: Hidemi Nakashima
- Applicant: Hidemi Nakashima
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-198753 20070731
- Main IPC: G11C7/22
- IPC: G11C7/22

Abstract:
A DQS detection circuit 13 detects a preamble of a DQS signal outputted from RAM 11. An up/down counter 14 counts up a number of clock signals CLK) in a period when an DQSEIN signal showing a continuation length of the DQS signal is active, counts down a number of trailing edges of the DQS signal after the preamble corresponding to a data read request, and detects that a counted value is set to 0. A flip-flop circuit FF2 makes a mask signal MS) a low level when the counted value is set to 0. An AND circuit AND2 makes the DQS signal maskable with a mask signal MS.
Public/Granted literature
- US20090034346A1 Memory read control circuit Public/Granted day:2009-02-05
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