Invention Grant
US07826292B2 Precharge control circuits and methods for memory having buffered write commands
有权
具有缓冲写入命令的存储器的预充电控制电路和方法
- Patent Title: Precharge control circuits and methods for memory having buffered write commands
- Patent Title (中): 具有缓冲写入命令的存储器的预充电控制电路和方法
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Application No.: US12266376Application Date: 2008-11-06
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Publication No.: US07826292B2Publication Date: 2010-11-02
- Inventor: Alan J. Wilson , Victor Wong , Jeffrey P. Wright
- Applicant: Alan J. Wilson , Victor Wong , Jeffrey P. Wright
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Memories, precharge control circuits, methods of controlling, and methods of utilizing are disclosed, including precharge control circuits for a memory having at least one bank of memory. One such control circuit includes at least one precharge preprocessor circuit. The precharge preprocessor circuit is coupled to a respective bank of memory and is configured to prevent precharge of the respective bank of memory until after execution of buffered write commands issued to the respective bank of memory is completed.
Public/Granted literature
- US20100110813A1 PRECHARGE CONTROL CIRCUITS AND METHODS FOR MEMORY HAVING BUFFERED WRITE COMMANDS Public/Granted day:2010-05-06
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