Invention Grant
- Patent Title: Fuse monitoring circuit for semiconductor memory device
- Patent Title (中): 半导体存储器件保险丝监控电路
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Application No.: US12165135Application Date: 2008-06-30
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Publication No.: US07826296B2Publication Date: 2010-11-02
- Inventor: Jae-Il Kim , Jae-Hyuk Im
- Applicant: Jae-Il Kim , Jae-Hyuk Im
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0139139 20071227
- Main IPC: G11C17/18
- IPC: G11C17/18

Abstract:
A fuse monitoring circuit for a semiconductor device includes a repair fuse unit including a number of fuses to which a repair address is programmed, and configured to output fuse state signals corresponding to the connection states of the respective fuses in response to a fuse initialization signal. A serial fuse monitoring unit is configured to output a fuse state monitoring signal corresponding to each fuse state signal selected by an applied address in response to a serial monitoring test mode signal. Also, a parallel fuse monitoring unit is configured to output a repair monitoring signal by comparing an applied address and the repair address in response to a parallel monitoring test mode signal. An output unit is configured to output the fuse state monitoring signal and the repair monitoring signal to an output pad in response to an output control signal.
Public/Granted literature
- US20090168580A1 FUSE MONITORING CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-07-02
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