Invention Grant
- Patent Title: Power supply switching circuit
- Patent Title (中): 电源开关电路
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Application No.: US12328180Application Date: 2008-12-04
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Publication No.: US07826297B2Publication Date: 2010-11-02
- Inventor: Takahisa Takeda , Fumiyasu Utsunomiya
- Applicant: Takahisa Takeda , Fumiyasu Utsunomiya
- Applicant Address: JP Chiba
- Assignee: Seiko Instruments Inc.
- Current Assignee: Seiko Instruments Inc.
- Current Assignee Address: JP Chiba
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2007-315461 20071206
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
In a power supply switching circuit, a transistor that switches to a highest voltage is formed of an enhancement type PMOS transistor, and transistors that switch other voltages are each formed of a depletion type NMOS transistor. A signal for controlling a gate of each of the transistors is input through a level shifter. The depletion type NMOS transistor does not operate in a bipolar manner even if a source voltage thereof reaches a power supply voltage VPP1 or VPP2, and the enhancement type PMOS transistor does not operate in the bipolar manner even if a gate voltage and a source voltage thereof reach the power supply voltage VPP1, and a drain voltage thereof reaches the power supply voltage VPP2. Accordingly, there can be provided the power supply voltage switching circuit that is high in efficiency.
Public/Granted literature
- US20090146499A1 POWER SUPPLY SWITCHING CIRCUIT Public/Granted day:2009-06-11
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