Invention Grant
- Patent Title: Active terahertz metamaterial devices
- Patent Title (中): 主动太赫兹超材料装置
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Application No.: US12418064Application Date: 2009-04-03
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Publication No.: US07826504B2Publication Date: 2010-11-02
- Inventor: Houtong Chen , Willie John Padilla , Richard Douglas Averitt , John F. O'Hara , Mark Lee
- Applicant: Houtong Chen , Willie John Padilla , Richard Douglas Averitt , John F. O'Hara , Mark Lee
- Applicant Address: US NM Los Alamos
- Assignee: Los Alamos National Security, LLC
- Current Assignee: Los Alamos National Security, LLC
- Current Assignee Address: US NM Los Alamos
- Agent John P. O'Banion
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01Q15/22

Abstract:
Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Each element within an array of metamaterial (MM) elements comprises multiple loops and at least one gap. The MM elements may comprise resonators with conductive loops and insulated gaps, or the inverse in which insulated loops are present with conductive gaps; each providing useful transmissive control properties. The metamaterial elements are fabricated on a semiconducting substrate configured with a means of enhancing or depleting electrons from near the gaps of the MM elements. An on to off transmissivity ratio of about 0.5 is achieved with this approach. Embodiments are described in which the MM elements incorporated within a Quantum Cascade Laser (QCL) to provide surface emitting (SE) properties.
Public/Granted literature
- US20090262766A1 ACTIVE TERAHERTZ METAMATERIAL DEVICES Public/Granted day:2009-10-22
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