Invention Grant
- Patent Title: Low-emissivity glass
- Patent Title (中): 低辐射玻璃
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Application No.: US11955284Application Date: 2007-12-12
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Publication No.: US07826704B2Publication Date: 2010-11-02
- Inventor: Ga-Lane Chen
- Applicant: Ga-Lane Chen
- Applicant Address: TW Tu-Cheng, Taipei Hsien
- Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: TW Tu-Cheng, Taipei Hsien
- Agent Jeffrey T. Knapp
- Priority: CN200710200311 20070321
- Main IPC: G02B6/10
- IPC: G02B6/10 ; G02B5/26 ; B32B17/06

Abstract:
A Low-E glass includes a glass substrate and a multilayer Low-E film formed on at least one surface of the glass substrate. The multilayer Low-E film includes a number of high refractive index layers and a number of low refractive index layers stacked on one another. An innermost layer contacting with the glass substrate is the high refractive index layer. A total number of layers of the multilayer Low-E film is in a range from 30 to 40.
Public/Granted literature
- US20080231979A1 LOW-EMISSIVITY GLASS Public/Granted day:2008-09-25
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