Invention Grant
- Patent Title: High performance flash memory devices (FMD)
- Patent Title (中): 高性能闪存设备(FMD)
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Application No.: US12017249Application Date: 2008-01-21
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Publication No.: US07827348B2Publication Date: 2010-11-02
- Inventor: Charles C. Lee , I-Kang Yu , David Q. Chow , Abraham Chih-Kang Ma , Ming-Shiang Shen
- Applicant: Charles C. Lee , I-Kang Yu , David Q. Chow , Abraham Chih-Kang Ma , Ming-Shiang Shen
- Applicant Address: US CA San Jose
- Assignee: Super Talent Electronics, Inc.
- Current Assignee: Super Talent Electronics, Inc.
- Current Assignee Address: US CA San Jose
- Agent Roger H. Chu
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
High performance flash memory devices (FMD) are described. According to one exemplary embodiment of the invention, a high performance FMD includes an I/O interface, a FMD controller, and at least one non-volatile memory module along with corresponding at least one channel controller. The I/O interface is configured to connect the high performance FMD to a host computing device The FMD contoller is configured to control data transfer (e.g., data reading, data writing/programming, and data erasing) operations between the host computing device and the non-volatile memory module. The at least one non-volatile memory module, comprising one or more non-volatile memory chips, is configured as a secondary storage for the host computing device. The at least one channel controller is configured to ensure proper and efficient data transfer between a set of data buffers located in the FMD controller and the at least one non-volatile memory module.
Public/Granted literature
- US20080147968A1 High Performance Flash Memory Devices (FMD) Public/Granted day:2008-06-19
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