发明授权
US07829357B2 Method and test structure for monitoring CMP processes in metallization layers of semiconductor devices 有权
用于监测半导体器件的金属化层中的CMP工艺的方法和测试结构

Method and test structure for monitoring CMP processes in metallization layers of semiconductor devices
摘要:
By forming a large metal pad and removing any excess material thereof, a pronounced recessed surface topography may be obtained, which may also affect the further formation of a metallization layer of a semiconductor device, thereby increasing the probability of maintaining metal residues above the recessed surface topography. Consequently, by providing test metal lines in the area of the recessed surface topography, the performance of a respective CMP process may be estimated with increased efficiency.
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