发明授权
US07829357B2 Method and test structure for monitoring CMP processes in metallization layers of semiconductor devices
有权
用于监测半导体器件的金属化层中的CMP工艺的方法和测试结构
- 专利标题: Method and test structure for monitoring CMP processes in metallization layers of semiconductor devices
- 专利标题(中): 用于监测半导体器件的金属化层中的CMP工艺的方法和测试结构
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申请号: US12165725申请日: 2008-07-01
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公开(公告)号: US07829357B2公开(公告)日: 2010-11-09
- 发明人: Michael Grillberger , Matthias Lehr
- 申请人: Michael Grillberger , Matthias Lehr
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Williams, Morgan & Amerson, P.C.
- 优先权: DE102007057684 20071130
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
By forming a large metal pad and removing any excess material thereof, a pronounced recessed surface topography may be obtained, which may also affect the further formation of a metallization layer of a semiconductor device, thereby increasing the probability of maintaining metal residues above the recessed surface topography. Consequently, by providing test metal lines in the area of the recessed surface topography, the performance of a respective CMP process may be estimated with increased efficiency.
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