One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.