Invention Grant
- Patent Title: Laser beam processing method for making a semiconductor device
- Patent Title (中): 用于制造半导体器件的激光束处理方法
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Application No.: US11968718Application Date: 2008-01-03
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Publication No.: US07829439B2Publication Date: 2010-11-09
- Inventor: Tsuyoshi Kida
- Applicant: Tsuyoshi Kida
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2004-255131 20040902
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/301

Abstract:
In a laser beam processing apparatus that processes a semiconductor wafer having a multi-layered wiring structure formed thereon, scribe lines defined thereon, and at least one alignment mark formed on any one of the scribe lines, a laser beam generator system generates a laser beam, and a movement system relatively moves the semiconductor wafer with respect to the laser beam such that the semiconductor wafer is irradiated with a laser beam along the scribe lines to partially remove the multi-layered wiring structure from the semiconductor wafer along the scribe lines. An irradiation control system controls the irradiation of the semiconductor wafer with the laser beam along the scribe lines such that the alignment mark is left on the scribe line.
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