A semiconductor laser device includes: a laminated body including an active layer, a cladding layer provided on the active layer, and a contact layer provided on the cladding layer, the laminated body having a first and second end face forming a resonator for light emitted from the active layer; and an electrode provided on the contact layer and including an ohmic section injecting a current into the active layer and a first current adjustment section provided between one end of the ohmic section and the first end face. The ohmic section contains a metal which has a smaller work function than any metal constituting the current adjustment section.