发明授权
- 专利标题: Method of manufacturing semiconductor laser for communication, semiconductor laser for communication and optical transmission module
- 专利标题(中): 制造用于通信的半导体激光器,通信用半导体激光器和光传输模块的方法
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申请号: US11882595申请日: 2007-08-02
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公开(公告)号: US07833807B2公开(公告)日: 2010-11-16
- 发明人: Hiroyuki Kamiyama , Masaru Mukaikubo , Hiroaki Inoue , Chiyuki Kitahara
- 申请人: Hiroyuki Kamiyama , Masaru Mukaikubo , Hiroaki Inoue , Chiyuki Kitahara
- 申请人地址: JP Kanagawa
- 专利权人: Opnext Japan, Inc.
- 当前专利权人: Opnext Japan, Inc.
- 当前专利权人地址: JP Kanagawa
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2006-225153 20060822
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
Some semiconductor lasers have an initial failure mode that is advanced as the amount of optical power therein, namely, the amount of optical output observed from the outside increases in almost independent of the temperature. The initial failure mode that is advanced as the amount of optical output increases is not sufficiently screened, so that the initial failure rate is somewhat higher than that of the semiconductor laser having the conventional active layer material. It is effective to introduce a test with large optical output at lower temperature than average operating temperature such as room temperature, during the manufacturing process. This helps to eliminate elements having the initial failure mode that is advanced as the amount optical output increases, thereby to extend the expected life of the laser diodes.
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