发明授权
- 专利标题: Semiconductor apparatus and method for manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12187601申请日: 2008-08-07
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公开(公告)号: US07833841B2公开(公告)日: 2010-11-16
- 发明人: Hidehiko Kando , Isao Sakama
- 申请人: Hidehiko Kando , Isao Sakama
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Brundidge & Stanger, P.C.
- 优先权: JP2007-243552 20070920
- 主分类号: H01L21/82
- IPC分类号: H01L21/82
摘要:
The present invention is a method for manufacturing a semiconductor apparatus including a chip which is fabricated in large numbers on a wafer and has a plurality of information blocks. In the method, a unique information bit is written in a chip discrimination block of each chip within a shot, which is a segmented region of the wafer, by a fixed pattern method. In addition, an information bit uniquely given to each shot within the wafer is written by a mask shift method. Further, an information bit uniquely given to each wafer is written in a wafer discrimination block of the chip which is fabricated on the wafer by the mask shift method and mask combination method.
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