发明授权
- 专利标题： Semiconductor device with tensile strain and compressive strain
- 专利标题（中）： 具有拉伸应变和压缩应变的半导体器件
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申请号： US12132965申请日： 2008-06-04
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公开(公告)号： US07834414B2公开(公告)日： 2010-11-16
- 发明人: Takashi Suzuki , Kiyoshi Ozawa
- 申请人： Takashi Suzuki , Kiyoshi Ozawa
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A semiconductor device according to the present invention includes an active region having a MOS transistor and a groove surrounding the periphery of the active region, in which the groove is filled with a combination of a first material that produces a tensile strain in the active region and a second material that produces a compressive strain. Thereby, the foregoing object is achieved.
公开/授权文献
- US20080237725A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 公开/授权日：2008-10-02
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