Invention Grant
- Patent Title: Magnetoresistive stack with enhanced pinned layer
- Patent Title (中): 具有增强钉扎层的磁阻堆叠
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Application No.: US11222624Application Date: 2005-09-09
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Publication No.: US07835116B2Publication Date: 2010-11-16
- Inventor: Song Sheng Xue , Paul Edward Anderson , Konstantin Rudolfovich Nikolaev , Patrick Joseph Ryan
- Applicant: Song Sheng Xue , Paul Edward Anderson , Konstantin Rudolfovich Nikolaev , Patrick Joseph Ryan
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Kinney & Lange, P.A.
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11B5/127
Abstract:
A magnetoresistive stack includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer such that such that the magnetic stabilizer enhances the stability of the magnetization direction of the pinned layer.
Public/Granted literature
- US20070058300A1 Magnetoresistive stack with enhanced pinned layer Public/Granted day:2007-03-15
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