发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US12172198申请日: 2008-07-11
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公开(公告)号: US07835171B2公开(公告)日: 2010-11-16
- 发明人: Kazuo Ono , Riichiro Takemura , Tomonori Sekiguchi
- 申请人: Kazuo Ono , Riichiro Takemura , Tomonori Sekiguchi
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2007-188328 20070719
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A resistance variable memory reduces the nonuniformity of resistance values after programming, so that a rewrite operation can be performed on a memory cell at high speed. A reference resistor is connected in series with the resistance variable memory cell, and a sensor amplifier detects whether the potential at an intermediate node between the memory cell and the reference resistor exceeds a given threshold voltage, so as to stop the write operation based on a detection result.
公开/授权文献
- US20090262568A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2009-10-22