Invention Grant
- Patent Title: Nonvolatile memory using resistance material
- Patent Title (中): 使用电阻材料的非易失性存储器
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Application No.: US12244042Application Date: 2008-10-02
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Publication No.: US07835199B2Publication Date: 2010-11-16
- Inventor: Joon-Yong Choi , Byung-Gil Choi , Du-Eung Kim
- Applicant: Joon-Yong Choi , Byung-Gil Choi , Du-Eung Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0102659 20071011
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C8/00
Abstract:
Provided is a nonvolatile memory using a resistance material. In embodiments of the invention, a PRAM is configured to apply a step-down voltage to wordlines during a standby mode. Aspects of the present invention thus provide a nonvolatile memory with reduced standby current. Additionally, embodiments of the invention allow for faster transition from a standby state to an active state.
Public/Granted literature
- US20090097304A1 NONVOLATILE MEMORY USING RESISTANCE MATERIAL Public/Granted day:2009-04-16
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