A magnetic random access memory includes a memory element having a first fixed layer, a first recording layer, and a first nonmagnetic layer, a first reference element having a second fixed layer, a second recording layer, and a second nonmagnetic layer, antiparallel data being written in the first reference element, a second reference element making a pair with the first reference element, and having a third fixed layer, a third recording layer, and a third nonmagnetic layer, parallel data being written in the second reference element, and a current source which, when a read operation is performed, supplies a current from the second fixed layer to the second recording layer in the first reference element, and supplies the current from the third recording layer to the third fixed layer in the second reference element.