发明授权
- 专利标题： Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method
- 专利标题（中）： 具有设置在波导两侧的衍射光栅的光半导体器件及其制造方法
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申请号： US11976123申请日： 2007-10-22
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公开(公告)号： US07835418B2公开(公告)日： 2010-11-16
- 发明人: Nobuaki Hatori , Tsuyoshi Yamamoto , Yasuhiko Arakawa
- 申请人： Nobuaki Hatori , Tsuyoshi Yamamoto , Yasuhiko Arakawa
- 申请人地址： JP Kawasaki JP Tokyo
- 专利权人： Fujitsu Limited,The University of Tokyo
- 当前专利权人： Fujitsu Limited,The University of Tokyo
- 当前专利权人地址： JP Kawasaki JP Tokyo
- 代理机构： Kratz, Quintos & Hanson, LLP
- 优先权： JP2006-336800 20061214
- 主分类号： H01S3/08
- IPC分类号： H01S3/08
摘要：
An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in the upper cladding layer on both sides of a distributed feedback region in a waveguide region (22), the waveguide region extending from one facet to the other of the semiconductor substrate. End regions (22B) are defined at both ends of the waveguide region and the distributed feedback region (22A) is disposed between the end regions. Low refractive index regions (26) are disposed in the upper cladding layer on both sides of each of the end regions of the waveguide region, the low refractive index regions having a refractive index lower than that of the upper cladding layer.
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