发明授权
US07837459B2 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
有权
使用光刻印刷法制造双镶嵌结构的方法，用于制造用于双镶嵌结构的压印光刻模具的方法，用于可压印电介质的材料和用于双重镶嵌图案中的光刻印刷光刻设备
- 专利标题： Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
- 专利标题（中）： 使用光刻印刷法制造双镶嵌结构的方法，用于制造用于双镶嵌结构的压印光刻模具的方法，用于可压印电介质的材料和用于双重镶嵌图案中的光刻印刷光刻设备
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申请号： US12221966申请日： 2008-08-07
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公开(公告)号： US07837459B2公开(公告)日： 2010-11-23
- 发明人: Matthew E. Colburn , Kenneth Raymond Carter , Gary M. McClelland , Dirk Pfeiffer
- 申请人： Matthew E. Colburn , Kenneth Raymond Carter , Gary M. McClelland , Dirk Pfeiffer
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Thomas A. Beck; Daniel P. Morris
- 主分类号： B29D11/00
- IPC分类号： B29D11/00
摘要：
The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
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