发明授权
US07838399B2 Plasma immersed ion implantation process using balanced etch-deposition process
有权
使用平衡蚀刻沉积工艺的等离子体浸入式离子注入工艺
- 专利标题: Plasma immersed ion implantation process using balanced etch-deposition process
- 专利标题(中): 使用平衡蚀刻沉积工艺的等离子体浸入式离子注入工艺
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申请号: US11748876申请日: 2007-05-15
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公开(公告)号: US07838399B2公开(公告)日: 2010-11-23
- 发明人: Peter Porshnev , Majeed A. Foad
- 申请人: Peter Porshnev , Majeed A. Foad
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson & Sheridan, LLP
- 主分类号: H01L21/26
- IPC分类号: H01L21/26 ; H01L21/42
摘要:
Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.
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