发明授权
- 专利标题： Magnetic memory cell and magnetic random access memory
- 专利标题（中）： 磁存储单元和磁性随机存取存储器
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申请号： US11905789申请日： 2007-10-04
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公开(公告)号： US07838953B2公开(公告)日： 2010-11-23
- 发明人: Hideo Ohno , Shoji Ikeda , Jun Hayakawa
- 申请人： Hideo Ohno , Shoji Ikeda , Jun Hayakawa
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2006-273329 20061004
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
A magnetic memory cell and a magnetic random access memory that are highly reliable and low-power consuming. An upper electrode having a connecting area smaller than the area of a ferromagnetic free layer of a magnetic memory cell is connected to the ferromagnetic free layer. A current is applied to produce an uneven magnetic field over the magnetic memory cell, whereby spin-transfer torque magnetization reversal can be realized with low current and at small write error rate.
公开/授权文献
- US20080105938A1 Magnetic memory cell and magnetic random access memory 公开/授权日：2008-05-08
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