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发明授权
US07839680B2 Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the same 有权
电可擦除可编程只读存储器（EEPROM）单元及其形成和读取方法

Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the same
摘要：
In a method of reading data in an EEPROM cell, a bit line voltage for reading is applied to the EEPROM cell including a memory transistor and a selection transistor. A first voltage is applied to a sense line of the memory transistor. A second voltage greater than the first voltage is applied to a word line of the selection transistor. A current passing through the EEPROM cell is compared with a predetermined reference current to read the data stored in the EEPROM cell. An on-cell current of the EEPROM cell may be increased in an erased state and the data in the cell may be readily discriminated.
摘要（中）：

在EEPROM单元中读取数据的方法中，用于读取的位线电压被施加到包括存储晶体管和选择晶体管的EEPROM单元。 第一电压被施加到存储晶体管的感测线。 大于第一电压的第二电压被施加到选择晶体管的字线。 将通过EEPROM单元的电流与预定的参考电流进行比较，以读取存储在EEPROM单元中的数据。 可以在擦除状态下增加EEPROM单元的通电池电流，并且可以容易地区分单元中的数据。

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