Invention Grant
- Patent Title: Raster frame beam system for electron beam lithography
- Patent Title (中): 光栅光栅系统
-
Application No.: US11458043Application Date: 2006-07-17
-
Publication No.: US07842935B2Publication Date: 2010-11-30
- Inventor: Meir Aloni , Mula Friedman , Jimmy Vishnipolsky , Gilad Almogy , Alon Litman , Yonatan Lehman , Doron Meshulach , Ehud Tirosh
- Applicant: Meir Aloni , Mula Friedman , Jimmy Vishnipolsky , Gilad Almogy , Alon Litman , Yonatan Lehman , Doron Meshulach , Ehud Tirosh
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel, Ltd.
- Current Assignee: Applied Materials Israel, Ltd.
- Current Assignee Address: IL Rehovot
- Agency: SNR Denton US LLP
- Main IPC: H01J37/00
- IPC: H01J37/00

Abstract:
A method for writing a master image on a substrate includes dividing the master image into a matrix of frames, each frame including an array of pixels defining a respective frame image in a respective frame position within the master image. An electron beam is scanned in a raster pattern over the substrate, while shaping the electron beam responsively to the respective frame image of each of the frames as the electron beam is scanned over the respective frame position, so that in each frame, the electron beam simultaneously writes a multiplicity of the pixels onto the substrate.
Public/Granted literature
- US20060243918A1 Raster Frame Beam System For Electron Beam Lithography Public/Granted day:2006-11-02
Information query