发明授权
- 专利标题： Nitride semiconductor device and method of manufacturing the same
- 专利标题（中）： 氮化物半导体器件及其制造方法
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申请号： US11274422申请日： 2005-11-16
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公开(公告)号： US07842962B2公开(公告)日： 2010-11-30
- 发明人: Katsuomi Shiozawa , Toshiyuki Oishi , Kazushige Kawasaki , Yuji Abe
- 申请人： Katsuomi Shiozawa , Toshiyuki Oishi , Kazushige Kawasaki , Yuji Abe
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2004-337282 20041122
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.