发明授权
US07843723B2 Semiconductor memory device capable of reading data reliably 有权
能够可靠地读取数据的半导体存储器件

Semiconductor memory device capable of reading data reliably
摘要:
A control unit reads data from a plurality of memory cells connected to one of the word lines in a read operation at a first level CR generated by a voltage generator circuit and in a read operation at a second level CR−x and finds the number of cells included between the first level and the second level from the data and, if the number is equal to or smaller than a specified value, determines the result of the read operation at the first level to be read data.
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