Invention Grant
US07844773B2 Refresh circuit and refresh method in semiconductor memory device
有权
半导体存储器件中的刷新电路和刷新方法
- Patent Title: Refresh circuit and refresh method in semiconductor memory device
- Patent Title (中): 半导体存储器件中的刷新电路和刷新方法
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Application No.: US11730275Application Date: 2007-03-30
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Publication No.: US07844773B2Publication Date: 2010-11-30
- Inventor: Jung Sunwoo , Yun-Sang Lee , Hoe-Ju Chung
- Applicant: Jung Sunwoo , Yun-Sang Lee , Hoe-Ju Chung
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0094704 20060928
- Main IPC: G06F12/00
- IPC: G06F12/00
Abstract:
A refresh method for a semiconductor memory device having more than one bank group is provided. The refresh method may include applying an all-refresh command to one the bank groups, determining if one of the bank groups includes a bank undergoing a refresh operation when the all-refresh command is received, and performing an all-refresh operation based on the determination.
Public/Granted literature
- US20080080285A1 Refresh circuit and refresh method in semiconductor memory device Public/Granted day:2008-04-03
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