Invention Grant
US07846640B2 Developer composition for resists and method for formation of resist pattern
有权
用于抗蚀剂的显影剂组合物和形成抗蚀剂图案的方法
- Patent Title: Developer composition for resists and method for formation of resist pattern
- Patent Title (中): 用于抗蚀剂的显影剂组合物和形成抗蚀剂图案的方法
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Application No.: US10561802Application Date: 2004-06-22
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Publication No.: US07846640B2Publication Date: 2010-12-07
- Inventor: Yasushi Washio , Koji Saito
- Applicant: Yasushi Washio , Koji Saito
- Applicant Address: JP Kawasaki-shi
- Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JP2003-184708 20030627
- International Application: PCT/JP2004/009077 WO 20040622
- International Announcement: WO2005/001578 WO 20050106
- Main IPC: G03C5/00
- IPC: G03C5/00
Abstract:
A developer composition for resists which has a high dissolution rate (high developing sensitivity). The developer composition for resists comprises an organic quaternary ammonium base as a main component and a surfactant containing an anionic surfactant represented by formula (I).
Public/Granted literature
- US20060154158A1 Developer composition for resists and method for formation of resist pattern Public/Granted day:2006-07-13
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